Semiconductor-type High-Frequency Induction Heating Device

The high-frequency induction heating device has achieved miniaturization, low power consumption and high reliability through the developments in electronics and semiconductor industry. The high-frequency generator has evolved multiple times from initial MC type to vacuum tube type then again to SCP type and realized tremendous advance by adopting semiconductor devices which were enabled through the development of new semiconductor devices. However, until recently, devices operating at low and middle frequencies relied on vacuum tubes. However, with the emergence of high speed MOSFET switching devices, semiconductor-type high-frequency induction heating devices that can be used not only at high frequencies but also at middle frequencies could be developed.
MOSFET-based inverter type high-frequency generators have a power efficiency up to 90%~95% as opposed to previous vacuum tube type devices that had an efficiency of 55%~60%. Also, unlike vacuum tube type high-frequency generators which required a drive power of 3,000~20,000[V], they only require a drive voltage of 500V or less thus not requiring high voltage equipment and thus preventing safety accidents and saving electric power energy. They also have other advantages such as small size, lightweight, ease of moving, no need for preheating, semipermanent lifetime and high precision. We have developed and supplied a high-frequency induction heating device by adopting FET, SIT and IGBT.